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| Smart Low Side Power Switch HITFET BTS 133TC Product Summary Features * Logic Level Input * Input Protection (ESD) *=Thermal shutdown with latch * Short circuit and Overload protection * Overvoltage protection * Current Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) I D(lim) I D(ISO) EAS 60 50 21 7 V m A A 2000 mJ limitation * Status feedback with external input resistor * Analog driving possible * AEC qualified * Green product (RoHS compliant) Application * All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V and 24 V DC applications * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS (R) chip on chip technology. Providing embedded protection functions. V bb + LOAD M D rain 2 1 IN dv /d t lim ita tio n C u rre n t O ve rvoltag e p rotection lim ita tio n ESD O v erloa d pro te ctio n O ve rte m pe rature p ro te ctio n S ho rt c ircu it S h ort circ uit p rotection p ro te ctio n S o u rce 3 H IT F E T Datasheet 1 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 133TC Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V VIN 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation TC = 25 C Unclamped single pulse inductive energy ID(ISO) = 7 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS VIN=low or high; VA =13.5 V td = 400 ms, RI = 2 , ID =0,5*7A td = 400 ms, RI = 2 , ID = 7A 90 74 VLD 3000 V EAS 2000 mJ Tj Tstg Ptot Symbol VDS VDS(SC) IIN no limit | IIN | 2 - 40 ... +150 - 55 ... +150 90 W C Value 60 32 mA Unit V Thermal resistance junction - case: junction - ambient: SMD version, device on PCB: 3) R thJC R thJA R thJA 1.4 75 45 K/W 1In case of thermal shutdown a minimum sensor holding current of 500 A has to be guaranteed (see also page 3). 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70m thick) copper area for Drain connection. PCB mounted vertical without blown air. Datasheet 2 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 133TC Electrical Characteristics Parameter at Tj=25C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150C, ID = 10 mA Off state drain current VDS = 32 V, Tj = -40...+150 C, VIN = 0 V Input threshold voltage ID = 1,4 mA Input current - normal operation, ID Datasheet 3 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 133TC Electrical Characteristics Parameter at T j=25C, unless otherwise specified Characteristics Initial peak short circuit current limit VIN = 10 V, VDS = 12 V Current limit 1) VIN = 10 V, VDS = 12 V, tm = 350 s, Tj = -40...+150 C Dynamic Characteristics VIN to 90% ID : RL = 2,2 , VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID : Turn-on time RL = 2,2 , VIN = 10 to 0 V, Vbb = 12 V Slew rate on Slew rate off 70 to 50% Vbb : 50 to 70% Vbb: -dVDS/dton dVDS/dtoff --1 1 3 3 V/s RL = 2,2 , VIN = 0 to 10 V, Vbb = 12 V RL = 2,2 , VIN = 10 to 0 V, Vbb = 12 V ton toff --40 70 100 170 s ID(lim) 21 28 40 ID(SCp) 65 A Symbol min. Values typ. max. Unit Protection Functions 2) Thermal overload trip temperature Unclamped single pulse inductive energy ID = 7 A, Tj = 25 C, Vbb = 32 V ID = 7 A, Tj = 150 C, Vbb = 32 V Tjt EAS 2000 450 150 165 C mJ Inverse Diode Inverse diode forward voltage IF = 5*7A, tm = 300 S, VIN = 0 V 1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 s. VSD - 1.08 - V 2Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Datasheet 4 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 133TC Block Diagramm Terms Inductive and overvoltage output clamp RL I IN 1 IN HITFET V Z D 2 D ID VDS Vbb S S VIN 3 HITFET Short circuit behaviour Input circuit (ESD protection) V IN I D(SCp) IN I D(Lim) ESD-ZD I Source ID t0 tm t1 t2 ESD zener diodes are not designed for DC current > 2 mA @ VIN >10V. t0: Turn on into a short circuit tm: Measurementpoint for ID(lim) t1: Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. t2: Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. Datasheet 5 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 133TC Maximum allowable power dissipation Ptot = f(Tc ) BTS 133 On-state resistance RON = f(Tj ); ID=7A; VIN =10V 100 100 W m 80 80 RDS(on) 70 70 60 max. Ptot 60 50 40 30 20 10 0 0 50 40 30 20 10 0 -50 typ. 20 40 60 80 100 120 C 150 160 -25 0 25 50 75 100 C 150 Tj On-state resistance R ON = f(Tj ); ID= 7A; VIN=5V 120 Typ. input threshold voltage VIN(th) = f(Tj); ID =1,4mA; VDS =12V 2.0 V m 100 1.6 RDS(on) 90 VIN(th) max. typ. 1.4 1.2 1.0 0.8 0.6 80 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 C 0.4 0.2 0.0 -50 150 -25 0 25 50 75 100 C 150 Tj Tj Datasheet 6 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 133TC Typ. transfer characteristics ID = f(VIN); VDS =12V; Tj =25C 24 Typ. output characteristic ID = f(VDS); Tj =25C Parameter: V IN 25 10V 6V A 5V A 4V 16 ID ID 12 8 15 10 Vin=3V 5 4 0 0 1 2 3 4 5 6 V 8 0 0 1 2 3 V 5 VIN VDS Transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 K/W 1 10 0 D=0.5 ZthJC 0.2 10 -1 0.1 0.05 0.02 0.01 10 -2 0.005 0 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s 10 2 tP Datasheet 7 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 133TC Application examples: Status signal of thermal shutdown by monitoring input current R St IN D S V bb C V IN HITFET V V IN thermal shutdown V = RST *IIN(3) Datasheet 8 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 133TC Package Outlines 1 Package Outlines 4.4 10 0.2 0...0.3 1 0.3 1.27 0.1 A B 0.05 7.55 1) 1.3 0.3 8.5 1) 9.25 0.2 (15) 2.4 0.1 4.7 0.5 2.7 0.3 0...0.15 1.05 0.75 0.1 2.54 5.08 0.25 M 0.5 0.1 8 MAX. AB 0.1 B 1) Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. Figure 1 PG-TO263-3-2 (Plastic Dual Small Outline Package) (RoHS-Compliant) GPT09085 To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page "Products": http://www.infineon.com/products. Datasheet 9 Dimensions in mm Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 133TC Revision History 2 Version Rev. 1.0 Revision History Date 2009-07-20 Changes inital released Datasheet Datasheet 10 Rev. 1.0, 2009-07-20 Edition 2009-07-20 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. |
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